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Li-Ting TSENG, Postdoctoral Fellow | Cited by 604 | of Paul Scherrer Institut, Villigen (PSI) | Read 38 publications | Contact Li-Ting TSENG
- Postdoctoral Fellow
Cited by. Year. Defects engineering induced room temperature ferromagnetism in transition metal doped MoS2. Y Wang, LT Tseng, PP Murmu, N Bao, J Kennedy, M Ionesc, J Ding, ... Materials & Design 121, 77-84. , 2017. 109. 2017. Intrinsic Ferromagnetism in the Diluted Magnetic Semiconductor.
View Li Ting (Lynn) Tseng’s profile on LinkedIn, the world’s largest professional community. Li Ting (Lynn) has 3 jobs listed on their profile. See the complete profile on LinkedIn and...
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May 4, 2020 · Dr. Li-Ting Tseng. at Paul Scherrer Institut. SPIE Involvement: Author Publications (12) Proceedings Article | 4 May 2020. Progress in EUV resists status ...
EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning
Mar 13, 2015 · Li and Na-doped MnO 2 have a lattice spacing of 0.510 and 0.512 nm in the (200) plane, respectively, which are smaller than that of K-MnO 2 with 6 at% K doping.
Oct 2, 2023 · We achieve SiO2/Si gratings with 75 nm half-pitch and 31 nm height, demonstrating the efficacy of the method and the feasibility of patterning with EUV lithography without the use of a photoresist.
