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1 day ago · The Rolling Stones have carved their names into the very foundation of rock and roll. But when it comes to picking their crowning achievement, many fans point to one particular album: Exile On Main St. Released in 1972, Exile defies easy categorization. With its rough-around-the-edges production and loose, bluesy jams, it sounds more like a […]
3 days ago · Experimental approach. When the tensile strain, applied to a polymer-supported thin film MG (see Fig. 1a and Methods section for more details), reaches the global elastic limit of approximately 2% ...
3 days ago · Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO in GeSn thin films grown by different methods have hardly been compared. This paper compares SRO in GeSn thin films of similar compositions grown by molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) using ...
1 day ago · The UV-visible analysis shows the band gap value of the annealed PbS thin films as 3.6 eV which makes it suitable for window layer in photovoltaic devices. The micrographs revealed that PbS thin films are polycrystalline and uniformly distributed.
4 days ago · Quiz yourself with questions and answers for A&P Skeletal Muscle Anatomy pt.3 (quiz), so you can be ready for test day. Explore quizzes and practice tests created by teachers and students or create one from your course material.
3 days ago · The energy band gap for the three samples as shown in Figures 4‣6 ranged between 3.35 eV and 4.00 eV indicating that the bad gap widens as the ligand was varied coupled with annealing though PbS material is characterized to be a direct band gap with its good feature in energy conversion that made the thin film good candidate for use in solar cell coupled also with its unique corrosion ...
3 days ago · Additionally, Zn doping promotes forming Sb 2 Se 3 thin films with the desired [hk1] orientation, resulting in denser and larger grain sizes which will eventually regulate the defect density. Finally, based on the energy band structure and high-quality Sb 2 Se 3 thin films, this study achieves a champion power conversion efficiency (PCE) of 8.76%, with a V OC of 458 mV, a J SC of 28.13 mA cm ...
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